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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor D P0903BI TO-251 Lead-Free PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m[ ID 50A 3 G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 SYMBOL VGS 12 LIMITS 20 50 35 UNITS V TC = 25 C TC = 100 C ID IDM IAR A 200 40 250 8.6 50 30 W mJ L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C EAS EAR PD Tj, Tstg TL Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) -55 to 150 275 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 SYMBOL RJC RJA RCS TYPICAL MAXIMUM 2.5 62.5 UNITS C / W 0.6 Pulse width limited by maximum junction temperature. Duty cycle 1H ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 nA A V LIMITS UNIT MIN TYP MAX 1 Mar-07-2005 NIKO-SEM On-State Drain Current 1 N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BI TO-251 Lead-Free 50 11 7.5 32 16 9.5 S A m[ ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 4.5V, ID = 20A VGS = 10V, ID = 25A Drain-Source On-State Resistance1 Forward Transconductance1 VDS = 10V, ID = 25A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time2 Rise Time 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) VDS = 15V, RL = 1[ ID 50A, VGS = 10V, RGEN = 24[ VDS = 10V, VGS = 10V, ID = 25A VGS = 0V, VDS = 15V, f = 1MHz 1200 600 350 25 15 10 6 120 40 105 1800 1000 500 50 nC pF 16 250 90 200 nS Turn-Off Delay Time2 Fall Time2 Continuous Current Pulsed Current 3 Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IS = 25A, VGS = 0V 0.9 70 200 0.043 50 150 1.3 A V nS A C Pulse test : Pulse Width 300 sec, Duty Cycle 2H. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P0903BI", DATE CODE or LOT # 2 Mar-07-2005 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BI TO-251 Lead-Free TYPICAL CHARACTERISTICS 3 Mar-07-2005 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BI TO-251 Lead-Free 4 Mar-07-2005 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BI TO-251 Lead-Free TO-251 (IPAK) MECHANICAL DATA mm Dimension Min. A B C D E F G 13.7 2.2 0.4 0.4 0.9 7.0 5.4 Typ. Max. 15.3 2.4 0.6 0.6 1.5 8.0 5.8 H I J K L M N Dimension Min. 1.4 6.4 5.2 0.6 0.4 2.3 Typ. Max. 2 6.8 5.5 0.9 0.8 mm A B D C H G F 3 1 K L M 2 J I E 5 Mar-07-2005 |
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